Thermal stability of rhenium Schottky contacts on n-type Al xGa1-xN

L. Zhou, F. A. Khan, G. Cueva, V. Kumar, I. Adesida, M. R. Sardela, F. D. Auret

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19 Citations (Scopus)

Abstract

The impact of rapid thermal annealing on the electrical and materials characteristics of Re Schottky contacts on n-type GaN and AlxGa 1-xN (x=0.10 and 0.26) was investigated. Effective barrier heights were obtained from current-voltage and modified Norde measurements on diodes annealed at up to 800°C. For AlxGa1-xN with x>0, Schottky barrier heights were found to increase upon annealing from the as-deposited state, but decreased sharply after annealing at 600°C. Modified Norde measurements indicate that this degradation could be explained by the existence of a shunt conduction path with an associated barrier height below 0.46 V, possibly a consequence of an inhomogeneous interface after annealing at temperatures above 600°C. A new defect lying at 0.34 eV below the conduction band edge was also detected by deep level transient spectroscopy after contact degradation.

Original languageEnglish
Pages (from-to)1624-1626
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number9
DOIs
Publication statusPublished - Aug 26 2002

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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