Abstract
Excellent annealed ohmic contacts based on Ge/Ag/Ni metallization have been realized in a temperature range between 385 and 500 °C, with a minimum contact resistance of 0.06 Ω·mm and a specific contact resistivity of 2.62 × 10-7 Ω cm2 obtained at an annealing temperature of 425 °C for 60 s in a rapid thermal annealing (RTA) system. Thermal storage tests at temperatures of 215 and 250°C in a nitrogen ambient showed that the Ge/Ag/Ni based ohmic contacts with an overlay of Ti/Pt/Au had far superior thermal stabilities than the conventional annealed AuGe/Ni ohmic contacts for InAlAs/InGaAs high electron mobility transistors (HEMTs). During the storage test at 215°C, the ohmic contacts showed no degradation after 200 h. At 250°C, the contact resistance value of the Ge/Ag/Ni ohmic contact increased only to a value of 0.1 Ω·mm over a 250-h period. Depletion-mode HEMTs (D-HEMTs) with a gate length of 0.2 μm fabricated using Ge/Ag/Ni ohmic contacts with an overlay of Ti/Pt/Au demonstrated excellent dc and RF characteristics.
| Original language | English |
|---|---|
| Pages (from-to) | 4-6 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 27 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 2006 |
| Externally published | Yes |
Fingerprint
Keywords
- Annealed
- Ge/Ag/Ni
- High electron mobility transistors (HEMTs)
- InAlAs/InGaAs
- Ohmic contact
- SiN
- Storage test
- Thermal stability
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Thermally stable Ge/Ag/Ni ohmic contact for InAlAs/InGaAs/InP HEMTs. / Zhao, Weifeng; Kim, Seiyon; Zhang, Jian; Adesida, Ilesanmi.
In: IEEE Electron Device Letters, Vol. 27, No. 1, 01.2006, p. 4-6.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Thermally stable Ge/Ag/Ni ohmic contact for InAlAs/InGaAs/InP HEMTs
AU - Zhao, Weifeng
AU - Kim, Seiyon
AU - Zhang, Jian
AU - Adesida, Ilesanmi
PY - 2006/1
Y1 - 2006/1
N2 - Excellent annealed ohmic contacts based on Ge/Ag/Ni metallization have been realized in a temperature range between 385 and 500 °C, with a minimum contact resistance of 0.06 Ω·mm and a specific contact resistivity of 2.62 × 10-7 Ω cm2 obtained at an annealing temperature of 425 °C for 60 s in a rapid thermal annealing (RTA) system. Thermal storage tests at temperatures of 215 and 250°C in a nitrogen ambient showed that the Ge/Ag/Ni based ohmic contacts with an overlay of Ti/Pt/Au had far superior thermal stabilities than the conventional annealed AuGe/Ni ohmic contacts for InAlAs/InGaAs high electron mobility transistors (HEMTs). During the storage test at 215°C, the ohmic contacts showed no degradation after 200 h. At 250°C, the contact resistance value of the Ge/Ag/Ni ohmic contact increased only to a value of 0.1 Ω·mm over a 250-h period. Depletion-mode HEMTs (D-HEMTs) with a gate length of 0.2 μm fabricated using Ge/Ag/Ni ohmic contacts with an overlay of Ti/Pt/Au demonstrated excellent dc and RF characteristics.
AB - Excellent annealed ohmic contacts based on Ge/Ag/Ni metallization have been realized in a temperature range between 385 and 500 °C, with a minimum contact resistance of 0.06 Ω·mm and a specific contact resistivity of 2.62 × 10-7 Ω cm2 obtained at an annealing temperature of 425 °C for 60 s in a rapid thermal annealing (RTA) system. Thermal storage tests at temperatures of 215 and 250°C in a nitrogen ambient showed that the Ge/Ag/Ni based ohmic contacts with an overlay of Ti/Pt/Au had far superior thermal stabilities than the conventional annealed AuGe/Ni ohmic contacts for InAlAs/InGaAs high electron mobility transistors (HEMTs). During the storage test at 215°C, the ohmic contacts showed no degradation after 200 h. At 250°C, the contact resistance value of the Ge/Ag/Ni ohmic contact increased only to a value of 0.1 Ω·mm over a 250-h period. Depletion-mode HEMTs (D-HEMTs) with a gate length of 0.2 μm fabricated using Ge/Ag/Ni ohmic contacts with an overlay of Ti/Pt/Au demonstrated excellent dc and RF characteristics.
KW - Annealed
KW - Ge/Ag/Ni
KW - High electron mobility transistors (HEMTs)
KW - InAlAs/InGaAs
KW - Ohmic contact
KW - SiN
KW - Storage test
KW - Thermal stability
UR - http://www.scopus.com/inward/record.url?scp=33645468340&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33645468340&partnerID=8YFLogxK
U2 - 10.1109/LED.2005.860381
DO - 10.1109/LED.2005.860381
M3 - Article
VL - 27
SP - 4
EP - 6
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 1
ER -