Thermally stable Ge/Ag/Ni ohmic contact for InAlAs/InGaAs/InP HEMTs

Weifeng Zhao, Seiyon Kim, Jian Zhang, Ilesanmi Adesida

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Excellent annealed ohmic contacts based on Ge/Ag/Ni metallization have been realized in a temperature range between 385 and 500 °C, with a minimum contact resistance of 0.06 Ω·mm and a specific contact resistivity of 2.62 × 10-7 Ω cm2 obtained at an annealing temperature of 425 °C for 60 s in a rapid thermal annealing (RTA) system. Thermal storage tests at temperatures of 215 and 250°C in a nitrogen ambient showed that the Ge/Ag/Ni based ohmic contacts with an overlay of Ti/Pt/Au had far superior thermal stabilities than the conventional annealed AuGe/Ni ohmic contacts for InAlAs/InGaAs high electron mobility transistors (HEMTs). During the storage test at 215°C, the ohmic contacts showed no degradation after 200 h. At 250°C, the contact resistance value of the Ge/Ag/Ni ohmic contact increased only to a value of 0.1 Ω·mm over a 250-h period. Depletion-mode HEMTs (D-HEMTs) with a gate length of 0.2 μm fabricated using Ge/Ag/Ni ohmic contacts with an overlay of Ti/Pt/Au demonstrated excellent dc and RF characteristics.

Original languageEnglish
Pages (from-to)4-6
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number1
DOIs
Publication statusPublished - Jan 2006
Externally publishedYes

Fingerprint

Ohmic contacts
High electron mobility transistors
Contact resistance
Rapid thermal annealing
Metallizing
Temperature
Thermodynamic stability
Nitrogen
Annealing
Degradation

Keywords

  • Annealed
  • Ge/Ag/Ni
  • High electron mobility transistors (HEMTs)
  • InAlAs/InGaAs
  • Ohmic contact
  • SiN
  • Storage test
  • Thermal stability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Thermally stable Ge/Ag/Ni ohmic contact for InAlAs/InGaAs/InP HEMTs. / Zhao, Weifeng; Kim, Seiyon; Zhang, Jian; Adesida, Ilesanmi.

In: IEEE Electron Device Letters, Vol. 27, No. 1, 01.2006, p. 4-6.

Research output: Contribution to journalArticle

Zhao, Weifeng ; Kim, Seiyon ; Zhang, Jian ; Adesida, Ilesanmi. / Thermally stable Ge/Ag/Ni ohmic contact for InAlAs/InGaAs/InP HEMTs. In: IEEE Electron Device Letters. 2006 ; Vol. 27, No. 1. pp. 4-6.
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