Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n-GaN

V. Kumar, L. Zhou, D. Selvanathan, I. Adesida

Research output: Contribution to journalArticle

122 Citations (Scopus)

Abstract

A metallization scheme consisting of Ti/Al/Mo/Au with excellent edge acuity has been developed for obtaining low-resistance ohmic contacts to n-GaN. Excellent ohmic characteristics with a specific contact resistivity as low as 4.7×10 -7-cm 2 were obtained by rapid thermal annealing of evaporated Ti/Al/Mo/Au at 850°C for 30 sec in a N 2 ambient. Additionally, no degradation in specific contact resistivity was observed for these contacts subjected to long-term annealing at 500°C for 360 h.

Original languageEnglish
Pages (from-to)1712-1714
Number of pages3
JournalJournal of Applied Physics
Volume92
Issue number3
DOIs
Publication statusPublished - Aug 1 2002
Externally publishedYes

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low resistance
electric contacts
acuity
electrical resistivity
annealing
degradation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n-GaN. / Kumar, V.; Zhou, L.; Selvanathan, D.; Adesida, I.

In: Journal of Applied Physics, Vol. 92, No. 3, 01.08.2002, p. 1712-1714.

Research output: Contribution to journalArticle

Kumar, V. ; Zhou, L. ; Selvanathan, D. ; Adesida, I. / Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n-GaN. In: Journal of Applied Physics. 2002 ; Vol. 92, No. 3. pp. 1712-1714.
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