A metallization scheme consisting of Ti/Al/Mo/Au with excellent edge acuity has been developed for obtaining low-resistance ohmic contacts to n-GaN. Excellent ohmic characteristics with a specific contact resistivity as low as 4.7×10 -7-cm 2 were obtained by rapid thermal annealing of evaporated Ti/Al/Mo/Au at 850°C for 30 sec in a N 2 ambient. Additionally, no degradation in specific contact resistivity was observed for these contacts subjected to long-term annealing at 500°C for 360 h.
ASJC Scopus subject areas
- Physics and Astronomy(all)