Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n-GaN

V. Kumar, L. Zhou, D. Selvanathan, I. Adesida

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125 Citations (Scopus)


A metallization scheme consisting of Ti/Al/Mo/Au with excellent edge acuity has been developed for obtaining low-resistance ohmic contacts to n-GaN. Excellent ohmic characteristics with a specific contact resistivity as low as 4.7×10 -7-cm 2 were obtained by rapid thermal annealing of evaporated Ti/Al/Mo/Au at 850°C for 30 sec in a N 2 ambient. Additionally, no degradation in specific contact resistivity was observed for these contacts subjected to long-term annealing at 500°C for 360 h.

Original languageEnglish
Pages (from-to)1712-1714
Number of pages3
JournalJournal of Applied Physics
Issue number3
Publication statusPublished - Aug 1 2002

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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