Abstract
Uniform Ti-doped hematite thin films were deposited on transparent fluorine-doped tin oxide FTO coated glasses using a pulsed laser deposition method. An influence of dopant concentration on the photoelectrochemical characteristics was examined under water splitting. Photocurrent measurements indicated that 3 mol% of Ti atoms was optimal dopant concentration in hematite films produced by this method. The maximum photocurrent density of un-doped and 3 mol% Ti-doped Fe2O3 photoelectrodes was 0.67 and 1.64 mA/cm2 at 1.23 V versus RHE, respectively. The incorporation of Ti atoms into hematite photoelectrodes was found to drastically enhance the water splitting performance.
| Original language | English |
|---|---|
| Pages (from-to) | 1539-1542 |
| Number of pages | 4 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 118 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2014 |
| Externally published | Yes |
ASJC Scopus subject areas
- Materials Science(all)
- Chemistry(all)
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Atabaev, T. S., Ajmal, M., Hong, N. H., Kim, H. K., & Hwang, Y. H. (2014). Ti-doped hematite thin films for efficient water splitting. Applied Physics A: Materials Science and Processing, 118(4), 1539-1542. https://doi.org/10.1007/s00339-014-8937-7