Transient phase change analysis of scaling in phase change devices

Eng Guan Yeo, Luping Shi, Rong Zhao, Chong Tow Chong, Ilesanmi Adesida

Research output: Contribution to journalArticle

Abstract

Phase Change Random Access Memory (PCRAM) is one of the next-generation nonvolatile memories with the most potential. A transient measurement method has been developed to link the transient phase change effect to its crystallization kinetics. The flexibility of this measurement method was demonstrated in this paper. This method was first applied to study scaling effects in phase change devices and it was found that scaling not only lowers programming current requirement, but also increases the phase change speed of the device. This suggests that high density and high speed phase change memory devices through scaling are achievable. The same method was applied to study the physical model of phase change and the evidence suggests that phase change in these devices does not proceed solely by nucleation, supporting the hypothesis of filament formation during phase change. This transient method would be an important analysis technique of novel phase change devices and materials.

Original languageEnglish
Pages (from-to)351-354
Number of pages4
JournalInternational Journal of Nanoscience
Volume9
Issue number4
DOIs
Publication statusPublished - Aug 2010
Externally publishedYes

Fingerprint

scaling
Data storage equipment
Equipment and Supplies
Phase change memory
Crystallization kinetics
Nucleation
random access memory
Crystallization
programming
filaments
flexibility
high speed
nucleation
crystallization
requirements
kinetics

Keywords

  • PCRAM
  • Phase-change memory
  • scaling
  • transient effect

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Materials Science(all)
  • Condensed Matter Physics
  • Biotechnology
  • Bioengineering

Cite this

Transient phase change analysis of scaling in phase change devices. / Yeo, Eng Guan; Shi, Luping; Zhao, Rong; Chong, Chong Tow; Adesida, Ilesanmi.

In: International Journal of Nanoscience, Vol. 9, No. 4, 08.2010, p. 351-354.

Research output: Contribution to journalArticle

Yeo, Eng Guan ; Shi, Luping ; Zhao, Rong ; Chong, Chong Tow ; Adesida, Ilesanmi. / Transient phase change analysis of scaling in phase change devices. In: International Journal of Nanoscience. 2010 ; Vol. 9, No. 4. pp. 351-354.
@article{78167c1c853f43e6989eb4bac755373f,
title = "Transient phase change analysis of scaling in phase change devices",
abstract = "Phase Change Random Access Memory (PCRAM) is one of the next-generation nonvolatile memories with the most potential. A transient measurement method has been developed to link the transient phase change effect to its crystallization kinetics. The flexibility of this measurement method was demonstrated in this paper. This method was first applied to study scaling effects in phase change devices and it was found that scaling not only lowers programming current requirement, but also increases the phase change speed of the device. This suggests that high density and high speed phase change memory devices through scaling are achievable. The same method was applied to study the physical model of phase change and the evidence suggests that phase change in these devices does not proceed solely by nucleation, supporting the hypothesis of filament formation during phase change. This transient method would be an important analysis technique of novel phase change devices and materials.",
keywords = "PCRAM, Phase-change memory, scaling, transient effect",
author = "Yeo, {Eng Guan} and Luping Shi and Rong Zhao and Chong, {Chong Tow} and Ilesanmi Adesida",
year = "2010",
month = "8",
doi = "10.1142/S0219581X10006946",
language = "English",
volume = "9",
pages = "351--354",
journal = "International Journal of Nanoscience",
issn = "0219-581X",
publisher = "World Scientific Publishing Co. Pte Ltd",
number = "4",

}

TY - JOUR

T1 - Transient phase change analysis of scaling in phase change devices

AU - Yeo, Eng Guan

AU - Shi, Luping

AU - Zhao, Rong

AU - Chong, Chong Tow

AU - Adesida, Ilesanmi

PY - 2010/8

Y1 - 2010/8

N2 - Phase Change Random Access Memory (PCRAM) is one of the next-generation nonvolatile memories with the most potential. A transient measurement method has been developed to link the transient phase change effect to its crystallization kinetics. The flexibility of this measurement method was demonstrated in this paper. This method was first applied to study scaling effects in phase change devices and it was found that scaling not only lowers programming current requirement, but also increases the phase change speed of the device. This suggests that high density and high speed phase change memory devices through scaling are achievable. The same method was applied to study the physical model of phase change and the evidence suggests that phase change in these devices does not proceed solely by nucleation, supporting the hypothesis of filament formation during phase change. This transient method would be an important analysis technique of novel phase change devices and materials.

AB - Phase Change Random Access Memory (PCRAM) is one of the next-generation nonvolatile memories with the most potential. A transient measurement method has been developed to link the transient phase change effect to its crystallization kinetics. The flexibility of this measurement method was demonstrated in this paper. This method was first applied to study scaling effects in phase change devices and it was found that scaling not only lowers programming current requirement, but also increases the phase change speed of the device. This suggests that high density and high speed phase change memory devices through scaling are achievable. The same method was applied to study the physical model of phase change and the evidence suggests that phase change in these devices does not proceed solely by nucleation, supporting the hypothesis of filament formation during phase change. This transient method would be an important analysis technique of novel phase change devices and materials.

KW - PCRAM

KW - Phase-change memory

KW - scaling

KW - transient effect

UR - http://www.scopus.com/inward/record.url?scp=78650138380&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650138380&partnerID=8YFLogxK

U2 - 10.1142/S0219581X10006946

DO - 10.1142/S0219581X10006946

M3 - Article

VL - 9

SP - 351

EP - 354

JO - International Journal of Nanoscience

JF - International Journal of Nanoscience

SN - 0219-581X

IS - 4

ER -