Transport Gap Opening and High On-Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries

Han Chun Wu, Alexander N. Chaika, Tsung Wei Huang, Askar Syrlybekov, Mourad Abid, Victor Yu Aristov, Olga V. Molodtsova, Sergey V. Babenkov, D. Marchenko, Jaime Sánchez-Barriga, Partha Sarathi Mandal, Andrei Yu Varykhalov, Yuran Niu, Barry E. Murphy, Sergey A. Krasnikov, Olaf Lübben, Jing Jing Wang, Huajun Liu, Li Yang, Hongzhou ZhangMohamed Abid, Yahya T. Janabi, Sergei N. Molotkov, Ching Ray Chang, Igor Shvets

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Trilayer graphene exhibits exceptional electronic properties that are of interest both for fundamental science and for technological applications. The ability to achieve a high on-off current ratio is the central question in this field. Here, we propose a simple method to achieve a current on-off ratio of 104 by opening a transport gap in Bernal-stacked trilayer graphene. We synthesized Bernal-stacked trilayer graphene with self-aligned periodic nanodomain boundaries (NBs) on the technologically relevant vicinal cubic-SiC(001) substrate and performed electrical measurements. Our low-temperature transport measurements clearly demonstrate that the self-aligned periodic NBs can induce a charge transport gap greater than 1.3 eV. More remarkably, the transport gap of ∼0.4 eV persists even at 100 K. Our results show the feasibility of creating new electronic nanostructures with high on-off current ratios using graphene on cubic-SiC.

Original languageEnglish
Pages (from-to)8967-8975
Number of pages9
JournalACS Nano
Volume9
Issue number9
DOIs
Publication statusPublished - Sep 22 2015
Externally publishedYes

Keywords

  • ARPES
  • nanodomain boundary
  • scanning tunneling microscopy
  • transport gap
  • trilayer graphene

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Wu, H. C., Chaika, A. N., Huang, T. W., Syrlybekov, A., Abid, M., Aristov, V. Y., Molodtsova, O. V., Babenkov, S. V., Marchenko, D., Sánchez-Barriga, J., Mandal, P. S., Varykhalov, A. Y., Niu, Y., Murphy, B. E., Krasnikov, S. A., Lübben, O., Wang, J. J., Liu, H., Yang, L., ... Shvets, I. (2015). Transport Gap Opening and High On-Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries. ACS Nano, 9(9), 8967-8975. https://doi.org/10.1021/acsnano.5b02877