Abstract
Trilayer graphene exhibits exceptional electronic properties that are of interest both for fundamental science and for technological applications. The ability to achieve a high on-off current ratio is the central question in this field. Here, we propose a simple method to achieve a current on-off ratio of 104 by opening a transport gap in Bernal-stacked trilayer graphene. We synthesized Bernal-stacked trilayer graphene with self-aligned periodic nanodomain boundaries (NBs) on the technologically relevant vicinal cubic-SiC(001) substrate and performed electrical measurements. Our low-temperature transport measurements clearly demonstrate that the self-aligned periodic NBs can induce a charge transport gap greater than 1.3 eV. More remarkably, the transport gap of ∼0.4 eV persists even at 100 K. Our results show the feasibility of creating new electronic nanostructures with high on-off current ratios using graphene on cubic-SiC.
Original language | English |
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Pages (from-to) | 8967-8975 |
Number of pages | 9 |
Journal | ACS Nano |
Volume | 9 |
Issue number | 9 |
DOIs | |
Publication status | Published - Sept 22 2015 |
Externally published | Yes |
Keywords
- ARPES
- nanodomain boundary
- scanning tunneling microscopy
- transport gap
- trilayer graphene
ASJC Scopus subject areas
- General Materials Science
- General Engineering
- General Physics and Astronomy