Abstract
Electrical properties of highly rectifying Pt/InP junctions fabricated by electrophoretic deposition of Pt nanoparticles are investigated at different temperatures by the measurement of current-voltage and capacitance-voltage characteristics. The forward I-V characteristics of the junction are described by thermionic emissions theory at low forward bias (3kT/q < V < 0.2 V) and by tunnelling current transport through the narrowed space charge region at forward bias V > 0.2 V. The reverse I-V characteristics are analysed in the scope of the thermionic emission model in the presence of shunt resistance. Electrical characteristics of these diodes are sensitive to gas mixtures with a low hydrogen concentration and show an extremely fast response and recovery time.
Original language | English |
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Article number | 045017 |
Journal | Semiconductor Science and Technology |
Volume | 29 |
Issue number | 4 |
DOIs | |
Publication status | Published - Apr 2014 |
Externally published | Yes |
Keywords
- electrophoretic deposition
- hydrogen sensors
- Pt nanoparticles
- Schottky diodes
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry