Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles

R. Yatskiv; J. Grym; V. V. Brus; O. Cernohorsky; P. D. Maryanchuk; C. Bazioti; G. P. Dimitrakopulos; Ph Komninou

doi:10.1088/0268-1242/29/4/045017

Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles

R. Yatskiv, J. Grym, V. V. Brus, O. Cernohorsky, P. D. Maryanchuk, C. Bazioti, G. P. Dimitrakopulos, Ph Komninou

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Electrical properties of highly rectifying Pt/InP junctions fabricated by electrophoretic deposition of Pt nanoparticles are investigated at different temperatures by the measurement of current-voltage and capacitance-voltage characteristics. The forward I-V characteristics of the junction are described by thermionic emissions theory at low forward bias (3kT/q < V < 0.2 V) and by tunnelling current transport through the narrowed space charge region at forward bias V > 0.2 V. The reverse I-V characteristics are analysed in the scope of the thermionic emission model in the presence of shunt resistance. Electrical characteristics of these diodes are sensitive to gas mixtures with a low hydrogen concentration and show an extremely fast response and recovery time.

Original language	English
Article number	045017
Journal	Semiconductor Science and Technology
Volume	29
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/29/4/045017
Publication status	Published - Apr 2014
Externally published	Yes

Keywords

electrophoretic deposition
hydrogen sensors
Pt nanoparticles
Schottky diodes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1088/0268-1242/29/4/045017

Fingerprint Dive into the research topics of 'Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles'. Together they form a unique fingerprint.

Cite this

Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles. / Yatskiv, R.; Grym, J.; Brus, V. V.; Cernohorsky, O.; Maryanchuk, P. D.; Bazioti, C.; Dimitrakopulos, G. P.; Komninou, Ph.

In: Semiconductor Science and Technology, Vol. 29, No. 4, 045017, 04.2014.

Research output: Contribution to journal › Article › peer-review

@article{3b48efc6c5164d29ba7245efb65e3eab,

title = "Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles",

abstract = "Electrical properties of highly rectifying Pt/InP junctions fabricated by electrophoretic deposition of Pt nanoparticles are investigated at different temperatures by the measurement of current-voltage and capacitance-voltage characteristics. The forward I-V characteristics of the junction are described by thermionic emissions theory at low forward bias (3kT/q < V < 0.2 V) and by tunnelling current transport through the narrowed space charge region at forward bias V > 0.2 V. The reverse I-V characteristics are analysed in the scope of the thermionic emission model in the presence of shunt resistance. Electrical characteristics of these diodes are sensitive to gas mixtures with a low hydrogen concentration and show an extremely fast response and recovery time.",

keywords = "electrophoretic deposition, hydrogen sensors, Pt nanoparticles, Schottky diodes",

author = "R. Yatskiv and J. Grym and Brus, {V. V.} and O. Cernohorsky and Maryanchuk, {P. D.} and C. Bazioti and Dimitrakopulos, {G. P.} and Ph Komninou",

year = "2014",

month = apr,

doi = "10.1088/0268-1242/29/4/045017",

language = "English",

volume = "29",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "4",

}

TY - JOUR

T1 - Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles

AU - Yatskiv, R.

AU - Grym, J.

AU - Brus, V. V.

AU - Cernohorsky, O.

AU - Maryanchuk, P. D.

AU - Bazioti, C.

AU - Dimitrakopulos, G. P.

AU - Komninou, Ph

PY - 2014/4

Y1 - 2014/4

N2 - Electrical properties of highly rectifying Pt/InP junctions fabricated by electrophoretic deposition of Pt nanoparticles are investigated at different temperatures by the measurement of current-voltage and capacitance-voltage characteristics. The forward I-V characteristics of the junction are described by thermionic emissions theory at low forward bias (3kT/q < V < 0.2 V) and by tunnelling current transport through the narrowed space charge region at forward bias V > 0.2 V. The reverse I-V characteristics are analysed in the scope of the thermionic emission model in the presence of shunt resistance. Electrical characteristics of these diodes are sensitive to gas mixtures with a low hydrogen concentration and show an extremely fast response and recovery time.

AB - Electrical properties of highly rectifying Pt/InP junctions fabricated by electrophoretic deposition of Pt nanoparticles are investigated at different temperatures by the measurement of current-voltage and capacitance-voltage characteristics. The forward I-V characteristics of the junction are described by thermionic emissions theory at low forward bias (3kT/q < V < 0.2 V) and by tunnelling current transport through the narrowed space charge region at forward bias V > 0.2 V. The reverse I-V characteristics are analysed in the scope of the thermionic emission model in the presence of shunt resistance. Electrical characteristics of these diodes are sensitive to gas mixtures with a low hydrogen concentration and show an extremely fast response and recovery time.

KW - electrophoretic deposition

KW - hydrogen sensors

KW - Pt nanoparticles

KW - Schottky diodes

UR - http://www.scopus.com/inward/record.url?scp=84896915016&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896915016&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/29/4/045017

DO - 10.1088/0268-1242/29/4/045017

M3 - Article

AN - SCOPUS:84896915016

VL - 29

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 4

M1 - 045017

ER -