Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles

R. Yatskiv, J. Grym, V. V. Brus, O. Cernohorsky, P. D. Maryanchuk, C. Bazioti, G. P. Dimitrakopulos, Ph Komninou

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21 Citations (Scopus)

Abstract

Electrical properties of highly rectifying Pt/InP junctions fabricated by electrophoretic deposition of Pt nanoparticles are investigated at different temperatures by the measurement of current-voltage and capacitance-voltage characteristics. The forward I-V characteristics of the junction are described by thermionic emissions theory at low forward bias (3kT/q < V < 0.2 V) and by tunnelling current transport through the narrowed space charge region at forward bias V > 0.2 V. The reverse I-V characteristics are analysed in the scope of the thermionic emission model in the presence of shunt resistance. Electrical characteristics of these diodes are sensitive to gas mixtures with a low hydrogen concentration and show an extremely fast response and recovery time.

Original languageEnglish
Article number045017
JournalSemiconductor Science and Technology
Volume29
Issue number4
DOIs
Publication statusPublished - Apr 2014
Externally publishedYes

Keywords

  • electrophoretic deposition
  • hydrogen sensors
  • Pt nanoparticles
  • Schottky diodes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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