We report transport measurements in high mobility GaAs/AIGaAs heterostructures with lateral surface-induced periodic potentials. A modulation period of 1900 Å was produced with Schottky gates located above the two-dimensional electron gas. Both commensuration and Shubnikov-de Haas oscillations were observed. Nonlinear conductance (dI/dVds) measurements revealed a sharp feature near zero source-drain voltage. With zero magnetic field this feature is a conductance dip while finite B turns it into a conductance peak. We suggest that the conductance features result from Zener tunneling through a tilted miniband spectrum caused by the superlattice potential.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - Dec 1 1997|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films