Transport study in high mobility GaAs/AIGaAs lateral superlattices

M. Hannan, R. W. Giannetta, R. Grundbacher, I. Adesida

Research output: Contribution to journalArticlepeer-review

Abstract

We report transport measurements in high mobility GaAs/AIGaAs heterostructures with lateral surface-induced periodic potentials. A modulation period of 1900 Å was produced with Schottky gates located above the two-dimensional electron gas. Both commensuration and Shubnikov-de Haas oscillations were observed. Nonlinear conductance (dI/dVds) measurements revealed a sharp feature near zero source-drain voltage. With zero magnetic field this feature is a conductance dip while finite B turns it into a conductance peak. We suggest that the conductance features result from Zener tunneling through a tilted miniband spectrum caused by the superlattice potential.

Original languageEnglish
Pages (from-to)1291-1294
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume15
Issue number3
DOIs
Publication statusPublished - Dec 1 1997

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Transport study in high mobility GaAs/AIGaAs lateral superlattices'. Together they form a unique fingerprint.

Cite this