Traps in AlGaNGaNSiC heterostructures studied by deep level transient spectroscopy

Z. Q. Fang, D. C. Look, D. H. Kim, I. Adesida

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97 Citations (Scopus)


AlGaNGaNSiC Schottky barrier diodes (SBDs), with and without Si3 N4 passivation, have been characterized by temperature-dependent current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy (DLTS). A dominant trap A1, with activation energy of 1.0 eV and apparent capture cross section of 2× 10-12 cm2, has been observed in both unpassivated and passivated SBDs. Based on the well-known logarithmic dependence of DLTS peak height with filling pulse width for a line-defect related trap, A1, which is commonly observed in thin GaN layers grown by various techniques, is believed to be associated with threading dislocations. At high temperatures, the DLTS signal sometimes becomes negative, likely due to an artificial surface-state effect.

Original languageEnglish
Article number182115
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number18
Publication statusPublished - Oct 31 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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