TY - JOUR
T1 - Traps in AlGaNGaNSiC heterostructures studied by deep level transient spectroscopy
AU - Fang, Z. Q.
AU - Look, D. C.
AU - Kim, D. H.
AU - Adesida, I.
N1 - Funding Information:
The work of Z-Q.F. and D.C.L. was supported by AFOSR Grant No. F49620-03-1-0197 (monitored by G. Witt), ONR Grant No. N00014-03-1-0467 (C. Wood), and USAF Contract No. F33615-00-C-5402 (J. Brown).
PY - 2005/10/31
Y1 - 2005/10/31
N2 - AlGaNGaNSiC Schottky barrier diodes (SBDs), with and without Si3 N4 passivation, have been characterized by temperature-dependent current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy (DLTS). A dominant trap A1, with activation energy of 1.0 eV and apparent capture cross section of 2× 10-12 cm2, has been observed in both unpassivated and passivated SBDs. Based on the well-known logarithmic dependence of DLTS peak height with filling pulse width for a line-defect related trap, A1, which is commonly observed in thin GaN layers grown by various techniques, is believed to be associated with threading dislocations. At high temperatures, the DLTS signal sometimes becomes negative, likely due to an artificial surface-state effect.
AB - AlGaNGaNSiC Schottky barrier diodes (SBDs), with and without Si3 N4 passivation, have been characterized by temperature-dependent current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy (DLTS). A dominant trap A1, with activation energy of 1.0 eV and apparent capture cross section of 2× 10-12 cm2, has been observed in both unpassivated and passivated SBDs. Based on the well-known logarithmic dependence of DLTS peak height with filling pulse width for a line-defect related trap, A1, which is commonly observed in thin GaN layers grown by various techniques, is believed to be associated with threading dislocations. At high temperatures, the DLTS signal sometimes becomes negative, likely due to an artificial surface-state effect.
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U2 - 10.1063/1.2126145
DO - 10.1063/1.2126145
M3 - Article
AN - SCOPUS:27344454630
VL - 87
SP - 1
EP - 3
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 18
M1 - 182115
ER -