Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes

Sookyung Choi, Minjun Yan, Liang Wang, Ilesanmi Adesida

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Ultra-dense nanometer-scale gratings (20 nm pitch) on thin silicon nitride (Si3N4) membrane substrates using hydrogen silsesquioxane (HSQ) resist have been fabricated. Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) were performed to evaluate the pattern quality of the HSQ gratings. The results are compared with HSQ gratings fabricated on silicon substrates.

Original languageEnglish
Pages (from-to)521-523
Number of pages3
JournalMicroelectronic Engineering
Volume86
Issue number4-6
DOIs
Publication statusPublished - Apr 2009
Externally publishedYes

Fingerprint

Silicon nitride
silicon nitrides
Hydrogen
gratings
membranes
Membranes
hydrogen
Electron energy loss spectroscopy
Silicon
Substrates
energy dissipation
electron energy
Transmission electron microscopy
transmission electron microscopy
Scanning electron microscopy
scanning electron microscopy
silicon
spectroscopy
silicon nitride

Keywords

  • Electron-beam lithography (EBL)
  • Hydrogen silsesquioxane (HSQ)
  • Scanning transmission electron microscopy (STEM)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes. / Choi, Sookyung; Yan, Minjun; Wang, Liang; Adesida, Ilesanmi.

In: Microelectronic Engineering, Vol. 86, No. 4-6, 04.2009, p. 521-523.

Research output: Contribution to journalArticle

Choi, Sookyung ; Yan, Minjun ; Wang, Liang ; Adesida, Ilesanmi. / Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes. In: Microelectronic Engineering. 2009 ; Vol. 86, No. 4-6. pp. 521-523.
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