Abstract
Ultra-dense nanometer-scale gratings (20 nm pitch) on thin silicon nitride (Si3N4) membrane substrates using hydrogen silsesquioxane (HSQ) resist have been fabricated. Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) were performed to evaluate the pattern quality of the HSQ gratings. The results are compared with HSQ gratings fabricated on silicon substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 521-523 |
| Number of pages | 3 |
| Journal | Microelectronic Engineering |
| Volume | 86 |
| Issue number | 4-6 |
| DOIs | |
| Publication status | Published - Apr 2009 |
| Externally published | Yes |
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Keywords
- Electron-beam lithography (EBL)
- Hydrogen silsesquioxane (HSQ)
- Scanning transmission electron microscopy (STEM)
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Cite this
Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes. / Choi, Sookyung; Yan, Minjun; Wang, Liang; Adesida, Ilesanmi.
In: Microelectronic Engineering, Vol. 86, No. 4-6, 04.2009, p. 521-523.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes
AU - Choi, Sookyung
AU - Yan, Minjun
AU - Wang, Liang
AU - Adesida, Ilesanmi
PY - 2009/4
Y1 - 2009/4
N2 - Ultra-dense nanometer-scale gratings (20 nm pitch) on thin silicon nitride (Si3N4) membrane substrates using hydrogen silsesquioxane (HSQ) resist have been fabricated. Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) were performed to evaluate the pattern quality of the HSQ gratings. The results are compared with HSQ gratings fabricated on silicon substrates.
AB - Ultra-dense nanometer-scale gratings (20 nm pitch) on thin silicon nitride (Si3N4) membrane substrates using hydrogen silsesquioxane (HSQ) resist have been fabricated. Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) were performed to evaluate the pattern quality of the HSQ gratings. The results are compared with HSQ gratings fabricated on silicon substrates.
KW - Electron-beam lithography (EBL)
KW - Hydrogen silsesquioxane (HSQ)
KW - Scanning transmission electron microscopy (STEM)
UR - http://www.scopus.com/inward/record.url?scp=65549112858&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=65549112858&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2008.12.055
DO - 10.1016/j.mee.2008.12.055
M3 - Article
VL - 86
SP - 521
EP - 523
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
IS - 4-6
ER -