Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes

Sookyung Choi; Minjun Yan; Liang Wang; Ilesanmi Adesida

doi:10.1016/j.mee.2008.12.055

Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes

Sookyung Choi, Minjun Yan, Liang Wang, Ilesanmi Adesida

Nazarbayev University

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Ultra-dense nanometer-scale gratings (20 nm pitch) on thin silicon nitride (Si₃N₄) membrane substrates using hydrogen silsesquioxane (HSQ) resist have been fabricated. Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) were performed to evaluate the pattern quality of the HSQ gratings. The results are compared with HSQ gratings fabricated on silicon substrates.

Original language	English
Pages (from-to)	521-523
Number of pages	3
Journal	Microelectronic Engineering
Volume	86
Issue number	4-6
DOIs	https://doi.org/10.1016/j.mee.2008.12.055
Publication status	Published - Apr 1 2009

Keywords

Electron-beam lithography (EBL)
Hydrogen silsesquioxane (HSQ)
Scanning transmission electron microscopy (STEM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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title = "Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes",

abstract = "Ultra-dense nanometer-scale gratings (20 nm pitch) on thin silicon nitride (Si3N4) membrane substrates using hydrogen silsesquioxane (HSQ) resist have been fabricated. Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) were performed to evaluate the pattern quality of the HSQ gratings. The results are compared with HSQ gratings fabricated on silicon substrates.",

keywords = "Electron-beam lithography (EBL), Hydrogen silsesquioxane (HSQ), Scanning transmission electron microscopy (STEM)",

author = "Sookyung Choi and Minjun Yan and Liang Wang and Ilesanmi Adesida",

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language = "English",

volume = "86",

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journal = "Microelectronic Engineering",

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T1 - Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes

AU - Choi, Sookyung

AU - Yan, Minjun

AU - Wang, Liang

AU - Adesida, Ilesanmi

PY - 2009/4/1

Y1 - 2009/4/1

N2 - Ultra-dense nanometer-scale gratings (20 nm pitch) on thin silicon nitride (Si3N4) membrane substrates using hydrogen silsesquioxane (HSQ) resist have been fabricated. Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) were performed to evaluate the pattern quality of the HSQ gratings. The results are compared with HSQ gratings fabricated on silicon substrates.

AB - Ultra-dense nanometer-scale gratings (20 nm pitch) on thin silicon nitride (Si3N4) membrane substrates using hydrogen silsesquioxane (HSQ) resist have been fabricated. Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) were performed to evaluate the pattern quality of the HSQ gratings. The results are compared with HSQ gratings fabricated on silicon substrates.

KW - Electron-beam lithography (EBL)

KW - Hydrogen silsesquioxane (HSQ)

KW - Scanning transmission electron microscopy (STEM)

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EP - 523

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 4-6

ER -

Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes

Abstract

Keywords

ASJC Scopus subject areas

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