Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes

Sookyung Choi; Minjun Yan; Liang Wang; Ilesanmi Adesida

doi:10.1016/j.mee.2008.12.055

Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes

Sookyung Choi, Minjun Yan, Liang Wang, Ilesanmi Adesida

Nazarbayev University

Research output: Contribution to journal › Article

13 Citations (Scopus)

Abstract

Ultra-dense nanometer-scale gratings (20 nm pitch) on thin silicon nitride (Si₃N₄) membrane substrates using hydrogen silsesquioxane (HSQ) resist have been fabricated. Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) were performed to evaluate the pattern quality of the HSQ gratings. The results are compared with HSQ gratings fabricated on silicon substrates.

Original language	English
Pages (from-to)	521-523
Number of pages	3
Journal	Microelectronic Engineering
Volume	86
Issue number	4-6
DOIs	https://doi.org/10.1016/j.mee.2008.12.055
Publication status	Published - Apr 1 2009

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Keywords

Electron-beam lithography (EBL)
Hydrogen silsesquioxane (HSQ)
Scanning transmission electron microscopy (STEM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Cite this

Choi, S., Yan, M., Wang, L., & Adesida, I. (2009). Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes. Microelectronic Engineering, 86(4-6), 521-523. https://doi.org/10.1016/j.mee.2008.12.055

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abstract = "Ultra-dense nanometer-scale gratings (20 nm pitch) on thin silicon nitride (Si3N4) membrane substrates using hydrogen silsesquioxane (HSQ) resist have been fabricated. Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) were performed to evaluate the pattern quality of the HSQ gratings. The results are compared with HSQ gratings fabricated on silicon substrates.",

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AU - Adesida, Ilesanmi

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N2 - Ultra-dense nanometer-scale gratings (20 nm pitch) on thin silicon nitride (Si3N4) membrane substrates using hydrogen silsesquioxane (HSQ) resist have been fabricated. Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) were performed to evaluate the pattern quality of the HSQ gratings. The results are compared with HSQ gratings fabricated on silicon substrates.

AB - Ultra-dense nanometer-scale gratings (20 nm pitch) on thin silicon nitride (Si3N4) membrane substrates using hydrogen silsesquioxane (HSQ) resist have been fabricated. Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) were performed to evaluate the pattern quality of the HSQ gratings. The results are compared with HSQ gratings fabricated on silicon substrates.

KW - Electron-beam lithography (EBL)

KW - Hydrogen silsesquioxane (HSQ)

KW - Scanning transmission electron microscopy (STEM)

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Access to Document

10.1016/j.mee.2008.12.055