Ultra-High Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method

Yi Song, Parsian K. Mohseni, Seung Hyun Kim, Jae Cheol Shin, Tatsumi Ishihara, Ilesanmi Adesida, Xiuling Li

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Junctionless FinFETs with an array of ultra-high aspect ratio (HAR) fins, enabled by inverse metal-assisted chemical etching, are developed to achieve high on-current per fin. The novel device fabrication process eliminates dry etching-induced plasma damage, high energy ion implantation damage, and subsequent high-temperature annealing thermal budget, ensuring interface quality between the high-k gate dielectric and the HAR fin channel. Indium phosphide junctionless FinFETs, of record HAR (as high as 50:1) fins, are demonstrated for the first time with excellent subthreshold slope (63 mV/dec) and ON/OFF ratio (3 × 105).

Original languageEnglish
Article number7485851
Pages (from-to)970-973
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number8
DOIs
Publication statusPublished - Aug 1 2016
Externally publishedYes

Keywords

  • FinFET
  • high aspect ratio
  • interface states
  • junctionless
  • metal-assisted chemicaletching
  • nanofabrication

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Song, Y., Mohseni, P. K., Kim, S. H., Shin, J. C., Ishihara, T., Adesida, I., & Li, X. (2016). Ultra-High Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method. IEEE Electron Device Letters, 37(8), 970-973. [7485851]. https://doi.org/10.1109/LED.2016.2577046