Ultralow resistance Si-containing Ti/Al/Mo/Au Ohmic contacts with large processing window for AlGaNGaN heterostructures

Fitih M. Mohammed, Liang Wang, Ilesanmi Adesida

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

We report on the electrical and microstructural characterization of Si-containing TiAlMoAu contacts for AlGaNGaN heterostructures. Excellent Ohmic contact formation with contact resistance and specific contact resistivity as low as 0.12 mm and 3.8× 10-7 cm2, respectively, have been obtained by the optimization of Si distribution in the metallization. The presence of Si strongly affects the Ohmic performance and microstructural makeup of the annealed contacts. Greater enhancement in Ohmic performance is achieved when optimized amount of Si is dispersed throughout the metallization.

Original languageEnglish
Article number212107
JournalApplied Physics Letters
Volume88
Issue number21
DOIs
Publication statusPublished - May 21 2006
Externally publishedYes

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electric contacts
contact resistance
electrical resistivity
optimization
augmentation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ultralow resistance Si-containing Ti/Al/Mo/Au Ohmic contacts with large processing window for AlGaNGaN heterostructures. / Mohammed, Fitih M.; Wang, Liang; Adesida, Ilesanmi.

In: Applied Physics Letters, Vol. 88, No. 21, 212107, 21.05.2006.

Research output: Contribution to journalArticle

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