Abstract
We report on the electrical and microstructural characterization of Si-containing TiAlMoAu contacts for AlGaNGaN heterostructures. Excellent Ohmic contact formation with contact resistance and specific contact resistivity as low as 0.12 mm and 3.8× 10-7 cm2, respectively, have been obtained by the optimization of Si distribution in the metallization. The presence of Si strongly affects the Ohmic performance and microstructural makeup of the annealed contacts. Greater enhancement in Ohmic performance is achieved when optimized amount of Si is dispersed throughout the metallization.
Original language | English |
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Article number | 212107 |
Journal | Applied Physics Letters |
Volume | 88 |
Issue number | 21 |
DOIs | |
Publication status | Published - May 21 2006 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)