Ultralow resistance Si-containing Ti/Al/Mo/Au Ohmic contacts with large processing window for AlGaNGaN heterostructures

Fitih M. Mohammed; Liang Wang; Ilesanmi Adesida

doi:10.1063/1.2206127

Ultralow resistance Si-containing Ti/Al/Mo/Au Ohmic contacts with large processing window for AlGaNGaN heterostructures

Fitih M. Mohammed, Liang Wang, Ilesanmi Adesida

Nazarbayev University

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

We report on the electrical and microstructural characterization of Si-containing TiAlMoAu contacts for AlGaNGaN heterostructures. Excellent Ohmic contact formation with contact resistance and specific contact resistivity as low as 0.12 mm and 3.8× 10-7 cm2, respectively, have been obtained by the optimization of Si distribution in the metallization. The presence of Si strongly affects the Ohmic performance and microstructural makeup of the annealed contacts. Greater enhancement in Ohmic performance is achieved when optimized amount of Si is dispersed throughout the metallization.

Original language	English
Article number	212107
Journal	Applied Physics Letters
Volume	88
Issue number	21
DOIs	https://doi.org/10.1063/1.2206127
Publication status	Published - May 21 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{6fe6394338274298996b08ed47f3e5a1,

title = "Ultralow resistance Si-containing Ti/Al/Mo/Au Ohmic contacts with large processing window for AlGaNGaN heterostructures",

abstract = "We report on the electrical and microstructural characterization of Si-containing TiAlMoAu contacts for AlGaNGaN heterostructures. Excellent Ohmic contact formation with contact resistance and specific contact resistivity as low as 0.12 mm and 3.8× 10-7 cm2, respectively, have been obtained by the optimization of Si distribution in the metallization. The presence of Si strongly affects the Ohmic performance and microstructural makeup of the annealed contacts. Greater enhancement in Ohmic performance is achieved when optimized amount of Si is dispersed throughout the metallization.",

author = "Mohammed, {Fitih M.} and Liang Wang and Ilesanmi Adesida",

note = "Funding Information: This work was supported by ONR under Contract No. N00014-01-1-1000-1072 (Monitor: Dr. H. Dietrich). (S)TEM measurements were carried out in the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439. Assistance of J. G. Wen and C. H. Lei in TEM is acknowledged. ",

year = "2006",

month = may,

day = "21",

doi = "10.1063/1.2206127",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "21",

}

TY - JOUR

T1 - Ultralow resistance Si-containing Ti/Al/Mo/Au Ohmic contacts with large processing window for AlGaNGaN heterostructures

AU - Mohammed, Fitih M.

AU - Wang, Liang

AU - Adesida, Ilesanmi

N1 - Funding Information: This work was supported by ONR under Contract No. N00014-01-1-1000-1072 (Monitor: Dr. H. Dietrich). (S)TEM measurements were carried out in the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439. Assistance of J. G. Wen and C. H. Lei in TEM is acknowledged.

PY - 2006/5/21

Y1 - 2006/5/21

N2 - We report on the electrical and microstructural characterization of Si-containing TiAlMoAu contacts for AlGaNGaN heterostructures. Excellent Ohmic contact formation with contact resistance and specific contact resistivity as low as 0.12 mm and 3.8× 10-7 cm2, respectively, have been obtained by the optimization of Si distribution in the metallization. The presence of Si strongly affects the Ohmic performance and microstructural makeup of the annealed contacts. Greater enhancement in Ohmic performance is achieved when optimized amount of Si is dispersed throughout the metallization.

AB - We report on the electrical and microstructural characterization of Si-containing TiAlMoAu contacts for AlGaNGaN heterostructures. Excellent Ohmic contact formation with contact resistance and specific contact resistivity as low as 0.12 mm and 3.8× 10-7 cm2, respectively, have been obtained by the optimization of Si distribution in the metallization. The presence of Si strongly affects the Ohmic performance and microstructural makeup of the annealed contacts. Greater enhancement in Ohmic performance is achieved when optimized amount of Si is dispersed throughout the metallization.

UR - http://www.scopus.com/inward/record.url?scp=33744539904&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33744539904&partnerID=8YFLogxK

U2 - 10.1063/1.2206127

DO - 10.1063/1.2206127

M3 - Article

AN - SCOPUS:33744539904

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

M1 - 212107

ER -

Ultralow resistance Si-containing Ti/Al/Mo/Au Ohmic contacts with large processing window for AlGaNGaN heterostructures

Abstract

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