Ultralow resistance Si-containing Ti/Al/Mo/Au Ohmic contacts with large processing window for AlGaNGaN heterostructures

Fitih M. Mohammed; Liang Wang; Ilesanmi Adesida

doi:10.1063/1.2206127

Ultralow resistance Si-containing Ti/Al/Mo/Au Ohmic contacts with large processing window for AlGaNGaN heterostructures

Fitih M. Mohammed, Liang Wang, Ilesanmi Adesida

Nazarbayev University

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

We report on the electrical and microstructural characterization of Si-containing TiAlMoAu contacts for AlGaNGaN heterostructures. Excellent Ohmic contact formation with contact resistance and specific contact resistivity as low as 0.12 mm and 3.8× 10-7 cm2, respectively, have been obtained by the optimization of Si distribution in the metallization. The presence of Si strongly affects the Ohmic performance and microstructural makeup of the annealed contacts. Greater enhancement in Ohmic performance is achieved when optimized amount of Si is dispersed throughout the metallization.

Original language	English
Article number	212107
Journal	Applied Physics Letters
Volume	88
Issue number	21
DOIs	https://doi.org/10.1063/1.2206127
Publication status	Published - May 21 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We report on the electrical and microstructural characterization of Si-containing TiAlMoAu contacts for AlGaNGaN heterostructures. Excellent Ohmic contact formation with contact resistance and specific contact resistivity as low as 0.12 mm and 3.8× 10-7 cm2, respectively, have been obtained by the optimization of Si distribution in the metallization. The presence of Si strongly affects the Ohmic performance and microstructural makeup of the annealed contacts. Greater enhancement in Ohmic performance is achieved when optimized amount of Si is dispersed throughout the metallization.",

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AB - We report on the electrical and microstructural characterization of Si-containing TiAlMoAu contacts for AlGaNGaN heterostructures. Excellent Ohmic contact formation with contact resistance and specific contact resistivity as low as 0.12 mm and 3.8× 10-7 cm2, respectively, have been obtained by the optimization of Si distribution in the metallization. The presence of Si strongly affects the Ohmic performance and microstructural makeup of the annealed contacts. Greater enhancement in Ohmic performance is achieved when optimized amount of Si is dispersed throughout the metallization.

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