Abstract
We report on the electrical and microstructural characterization of Si-containing TiAlMoAu contacts for AlGaNGaN heterostructures. Excellent Ohmic contact formation with contact resistance and specific contact resistivity as low as 0.12 mm and 3.8× 10-7 cm2, respectively, have been obtained by the optimization of Si distribution in the metallization. The presence of Si strongly affects the Ohmic performance and microstructural makeup of the annealed contacts. Greater enhancement in Ohmic performance is achieved when optimized amount of Si is dispersed throughout the metallization.
| Original language | English |
|---|---|
| Article number | 212107 |
| Journal | Applied Physics Letters |
| Volume | 88 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - May 21 2006 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Ultralow resistance Si-containing Ti/Al/Mo/Au Ohmic contacts with large processing window for AlGaNGaN heterostructures. / Mohammed, Fitih M.; Wang, Liang; Adesida, Ilesanmi.
In: Applied Physics Letters, Vol. 88, No. 21, 212107, 21.05.2006.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ultralow resistance Si-containing Ti/Al/Mo/Au Ohmic contacts with large processing window for AlGaNGaN heterostructures
AU - Mohammed, Fitih M.
AU - Wang, Liang
AU - Adesida, Ilesanmi
PY - 2006/5/21
Y1 - 2006/5/21
N2 - We report on the electrical and microstructural characterization of Si-containing TiAlMoAu contacts for AlGaNGaN heterostructures. Excellent Ohmic contact formation with contact resistance and specific contact resistivity as low as 0.12 mm and 3.8× 10-7 cm2, respectively, have been obtained by the optimization of Si distribution in the metallization. The presence of Si strongly affects the Ohmic performance and microstructural makeup of the annealed contacts. Greater enhancement in Ohmic performance is achieved when optimized amount of Si is dispersed throughout the metallization.
AB - We report on the electrical and microstructural characterization of Si-containing TiAlMoAu contacts for AlGaNGaN heterostructures. Excellent Ohmic contact formation with contact resistance and specific contact resistivity as low as 0.12 mm and 3.8× 10-7 cm2, respectively, have been obtained by the optimization of Si distribution in the metallization. The presence of Si strongly affects the Ohmic performance and microstructural makeup of the annealed contacts. Greater enhancement in Ohmic performance is achieved when optimized amount of Si is dispersed throughout the metallization.
UR - http://www.scopus.com/inward/record.url?scp=33744539904&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33744539904&partnerID=8YFLogxK
U2 - 10.1063/1.2206127
DO - 10.1063/1.2206127
M3 - Article
AN - SCOPUS:33744539904
VL - 88
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 21
M1 - 212107
ER -