Utilization of an electron beam resist process to examine the effects of asymmetric gate recess on the device characteristics of AlGaAs/InGaAs PHEMT's

Ronald Grundbacher, Dan Ballegeer, Andrew A. Ketterson, Y. C. Kao, Ilesanmi Adesida

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

The DC and microwave characteristics of two sets of AlGaAs/InGaAs PHEMT's having a gate length of 0.2 μm are compared. The first set is composed of devices fabricated using a trilayer electron beam resist process for T-gate recess and metallization. The second set is composed of devices fabricated using a new four-layer electron beam resist process which enables the asymmetric placement of a T-gate in a wide recess trench. Devices fabricated using the four-layer resist process showed improved breakdown voltage lower gate-drain feedback capacitance lower output conductance and higher fmax with only slight reduction of drain current and transconductance. For example the off-state drain-source breakdown voltage increased from 5.2 to 12.5 V and the fmax increased from 133 to 158 GHz as the drain side cap recess Lud was increased from 0 to 0.55 μm.

Original languageEnglish
Pages (from-to)2136-2142
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume44
Issue number12
DOIs
Publication statusPublished - 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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