Utilization of an electron beam resist process to examine the effects of asymmetric gate recess on the device characteristics of AlGaAs/InGaAs PHEMT's

Ronald Grundbacher, Dan Ballegeer, Andrew A. Ketterson, Y. C. Kao, Ilesanmi Adesida

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The DC and microwave characteristics of two sets of AlGaAs/InGaAs PHEMT's having a gate length of 0.2 μm are compared. The first set is composed of devices fabricated using a trilayer electron beam resist process for T-gate recess and metallization. The second set is composed of devices fabricated using a new four-layer electron beam resist process which enables the asymmetric placement of a T-gate in a wide recess trench. Devices fabricated using the four-layer resist process showed improved breakdown voltage lower gate-drain feedback capacitance lower output conductance and higher fmax with only slight reduction of drain current and transconductance. For example the off-state drain-source breakdown voltage increased from 5.2 to 12.5 V and the fmax increased from 133 to 158 GHz as the drain side cap recess Lud was increased from 0 to 0.55 μm.

Original languageEnglish
Pages (from-to)2136-2142
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume44
Issue number12
DOIs
Publication statusPublished - 1997
Externally publishedYes

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recesses
Electric breakdown
aluminum gallium arsenides
Electron beams
electron beams
Drain current
Transconductance
Metallizing
electrical faults
Capacitance
Microwaves
Feedback
transconductance
caps
low voltage
capacitance
direct current
microwaves
output

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Utilization of an electron beam resist process to examine the effects of asymmetric gate recess on the device characteristics of AlGaAs/InGaAs PHEMT's. / Grundbacher, Ronald; Ballegeer, Dan; Ketterson, Andrew A.; Kao, Y. C.; Adesida, Ilesanmi.

In: IEEE Transactions on Electron Devices, Vol. 44, No. 12, 1997, p. 2136-2142.

Research output: Contribution to journalArticle

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