VERY HIGH RESOLUTION ION BEAM LITHOGRAPHY.

I. Adesida, A. Muray, M. Isaacson, E. D. Wolf

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A description of ion beam lithography (IBL) is presented. The resolution limit of IBL is estimated to be less than 10 nm. Replication of very high resolution transmission masks with protons is demonstrated with features as small as 30 nm in PMMA.

Original languageEnglish
Title of host publicationUnknown Host Publication Title
PublisherAcademic Press
Pages151-156
Number of pages6
ISBN (Print)0120449803
Publication statusPublished - Dec 1 1983

    Fingerprint

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Adesida, I., Muray, A., Isaacson, M., & Wolf, E. D. (1983). VERY HIGH RESOLUTION ION BEAM LITHOGRAPHY. In Unknown Host Publication Title (pp. 151-156). Academic Press.