Visible to Near-Infrared Photodiodes with Advanced Radiation Resistance

Viktor V. Brus, Mykhailo M. Solovan, Nora Schopp, Marat Kaikanov, Andriy I. Mostovyi

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

A new type of sub-micron metal-intrinsic semiconductor-metal visible to near-infrared (400–1600 nm) photodiodes based on a unique combination of radiation-resistant functional materials: sapphire, TiN, MoOx, CdTe, Hg3In2Te6, and graphite is proposed. The promising optoelectronic characteristics are calculated in the scope of a comprehensive semi-analytical model, based on the complementary fusion of numerical Transfer Matrix optical simulation with analytical Hecht and dark generation current equations. The findings demonstrate proof-of-concept next-generation high-performance optoelectronic devices with advanced radiation resistance. Moreover, a simple device engineering modification has revealed a significant optimization potential for considered photodiodes.

Original languageEnglish
Article number2100436
JournalAdvanced Theory and Simulations
Volume5
Issue number3
DOIs
Publication statusPublished - Mar 2022

Keywords

  • CdTe
  • MIT
  • optoelectronics
  • photodiode
  • radiation resistance

ASJC Scopus subject areas

  • Statistics and Probability
  • Numerical Analysis
  • Modelling and Simulation
  • General

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