Wavelength dependent characteristics of high-speed metamorphic photodiodes

J. H. Jang, G. Cueva, R. Sankaralingam, P. Fay, W. E. Hoke, I. Adesida

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Double-heterojunction photodiodes based on GaAs metamorphic growth technology are described. The effect of the large bandgap InAlAs layer incorporated in the device heterostructure was examined by measuring wavelength dependent responsivities and bandwidths at 0.85-, 1.33-, and 1.55-μm illumination. The photodiodes exhibited 0.4 A/W responsivity and over 50-GHz bandwidth for 1.55-μm laser illumination. The bias voltage required to achieve the maximum bandwidth was measured to be less than -1 V.

Original languageEnglish
Pages (from-to)281-283
Number of pages3
JournalIEEE Photonics Technology Letters
Volume15
Issue number2
DOIs
Publication statusPublished - Feb 2003
Externally publishedYes

Fingerprint

Photodiodes
photodiodes
high speed
bandwidth
Bandwidth
Wavelength
Heterojunctions
Lighting
illumination
wavelengths
Bias voltage
heterojunctions
Energy gap
Lasers
electric potential
lasers

Keywords

  • GaAs
  • Metamorphic
  • Photodiodes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Atomic and Molecular Physics, and Optics

Cite this

Wavelength dependent characteristics of high-speed metamorphic photodiodes. / Jang, J. H.; Cueva, G.; Sankaralingam, R.; Fay, P.; Hoke, W. E.; Adesida, I.

In: IEEE Photonics Technology Letters, Vol. 15, No. 2, 02.2003, p. 281-283.

Research output: Contribution to journalArticle

Jang, J. H. ; Cueva, G. ; Sankaralingam, R. ; Fay, P. ; Hoke, W. E. ; Adesida, I. / Wavelength dependent characteristics of high-speed metamorphic photodiodes. In: IEEE Photonics Technology Letters. 2003 ; Vol. 15, No. 2. pp. 281-283.
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