Well-aligned single-crystalline gan nanocolumns and their field emission properties

Zhuo Chen, Chuanbao Cao, Wai Sang Li, Charles Surya

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)


Well-aligned GaN nanocolumns on silicon substrate were fabricated by simple and low-cost chemical vapor deposition without any catalyst. The structure and morphology of the as-synthesized GaN nanocolumns were characterized by X-ray diffraction and scanning and transmission electron microscopies. The aligned GaN nanocolumn arrays exhibited excellent field emission properties with a low turn-on field of 2.6 V/μm (0.01 mA/cm2) and high stability at room temperature, which is sufficient for applications of field emission displays and vacuum nanoelectronic devices. The room-temperature photolurninescence emission with a strong peak at 369 nm indicates that the well-aligned GaN nanocolumns have potential application in light-emitting nanodevices.

Original languageEnglish
Pages (from-to)792-796
Number of pages5
JournalCrystal Growth and Design
Issue number2
Publication statusPublished - Feb 1 2009
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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