Well-aligned GaN nanocolumns on silicon substrate were fabricated by simple and low-cost chemical vapor deposition without any catalyst. The structure and morphology of the as-synthesized GaN nanocolumns were characterized by X-ray diffraction and scanning and transmission electron microscopies. The aligned GaN nanocolumn arrays exhibited excellent field emission properties with a low turn-on field of 2.6 V/μm (0.01 mA/cm2) and high stability at room temperature, which is sufficient for applications of field emission displays and vacuum nanoelectronic devices. The room-temperature photolurninescence emission with a strong peak at 369 nm indicates that the well-aligned GaN nanocolumns have potential application in light-emitting nanodevices.
|Number of pages||5|
|Journal||Crystal Growth and Design|
|Publication status||Published - Feb 1 2009|
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics