Wideband AlGaN/GaN HEMTs on SiC for low noise applications

Wu Lu, J. W. Yang, M. Asif Khan, Ilesanmi Adesida

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

The DC, RF, and high frequency noise characteristics of AlGaN/GaN high electron mobility transistor (HEMTs) demonstrating a record bandwidth of 100 GHz and NFmin of 0.53 dB at 8 GHz were studied. Excellent DC, RF, and high frequency noise performances was observed. Hence, the potential of AlGaN/GaN HEMTs for high frequency and low noise applications was confirmed.

Original languageEnglish
Pages39-40
Number of pages2
Publication statusPublished - Jan 1 2000
Event58th Device Research Conference (58th DRC) - Denver, CO, USA
Duration: Jun 19 2000Jun 21 2000

Conference

Conference58th Device Research Conference (58th DRC)
CityDenver, CO, USA
Period6/19/006/21/00

ASJC Scopus subject areas

  • Engineering(all)

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