ZnxCd1 - xS as a heterojunction partner for CuIn1 - xGaxS2 thin film solar cells

Bhaskar Kumar; Parag Vasekar; Shirish A. Pethe; Neelkanth G. Dhere; Galymzhan T. Koishiyev

doi:10.1016/j.tsf.2008.10.108

Zn_xCd_{1 - x}S as a heterojunction partner for CuIn_{1 - x}Ga_xS₂ thin film solar cells

Bhaskar Kumar, Parag Vasekar, Shirish A. Pethe, Neelkanth G. Dhere, Galymzhan T. Koishiyev

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Zinc cadmium sulfide (Zn_xCd_{1 - x}S) heterojunction partner layer prepared with chemical bath deposition (CBD) has exhibited better blue photon response and higher current densities due to its higher bandgap than that of conventional cadmium sulfide (CdS) layer for CuIn_{1 - x}Ga_xS₂ (CIGS2) solar cells. CIGS2/Zn_xCd_{1 - x}S devices have also shown higher open circuit voltage, V_oc indicating improved junction properties. A conduction band offset has been observed by J-V curves at various temperatures indicating that still higher V_oc can be obtained by optimizing the conduction band offset. This contribution discusses the effect of variation of parameters such as concentration of compounds, pH of solution and deposition time during CBD on device properties and composition and crystallinity of film. Efficiencies comparable to CIGS2/CdS devices have been achieved for CIGS2/Zn_xCd_{1 - x}S devices.

Original language	English
Pages (from-to)	2295-2299
Number of pages	5
Journal	Thin Solid Films
Volume	517
Issue number	7
DOIs	https://doi.org/10.1016/j.tsf.2008.10.108
Publication status	Published - Feb 2 2009
Externally published	Yes

Keywords

Alternate heterojunction
CIGS2
ZnCdS

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2008.10.108

Cite this

@article{82093eaad74041e695864a38caec1db3,

title = "ZnxCd1 - xS as a heterojunction partner for CuIn1 - xGaxS2 thin film solar cells",

abstract = "Zinc cadmium sulfide (ZnxCd1 - xS) heterojunction partner layer prepared with chemical bath deposition (CBD) has exhibited better blue photon response and higher current densities due to its higher bandgap than that of conventional cadmium sulfide (CdS) layer for CuIn1 - xGaxS2 (CIGS2) solar cells. CIGS2/ZnxCd1 - xS devices have also shown higher open circuit voltage, Voc indicating improved junction properties. A conduction band offset has been observed by J-V curves at various temperatures indicating that still higher Voc can be obtained by optimizing the conduction band offset. This contribution discusses the effect of variation of parameters such as concentration of compounds, pH of solution and deposition time during CBD on device properties and composition and crystallinity of film. Efficiencies comparable to CIGS2/CdS devices have been achieved for CIGS2/ZnxCd1 - xS devices.",

keywords = "Alternate heterojunction, CIGS2, ZnCdS",

author = "Bhaskar Kumar and Parag Vasekar and Pethe, {Shirish A.} and Dhere, {Neelkanth G.} and Koishiyev, {Galymzhan T.}",

note = "Funding Information: This research was supported by NREL contract number XXL-5-44205-08 through the Thin-Film Partnership Program. Authors are thankful to Dr. Tom Moriarity and Dr. Keith Emery at the NREL for I – V and QE measurements, Dr. James Sites at the Colorado State University for useful discussions and Kirk Scammon of the AMPAC, UCF for materials characterization.",

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T1 - ZnxCd1 - xS as a heterojunction partner for CuIn1 - xGaxS2 thin film solar cells

AU - Kumar, Bhaskar

AU - Vasekar, Parag

AU - Pethe, Shirish A.

AU - Dhere, Neelkanth G.

AU - Koishiyev, Galymzhan T.

N1 - Funding Information: This research was supported by NREL contract number XXL-5-44205-08 through the Thin-Film Partnership Program. Authors are thankful to Dr. Tom Moriarity and Dr. Keith Emery at the NREL for I – V and QE measurements, Dr. James Sites at the Colorado State University for useful discussions and Kirk Scammon of the AMPAC, UCF for materials characterization.

PY - 2009/2/2

Y1 - 2009/2/2

N2 - Zinc cadmium sulfide (ZnxCd1 - xS) heterojunction partner layer prepared with chemical bath deposition (CBD) has exhibited better blue photon response and higher current densities due to its higher bandgap than that of conventional cadmium sulfide (CdS) layer for CuIn1 - xGaxS2 (CIGS2) solar cells. CIGS2/ZnxCd1 - xS devices have also shown higher open circuit voltage, Voc indicating improved junction properties. A conduction band offset has been observed by J-V curves at various temperatures indicating that still higher Voc can be obtained by optimizing the conduction band offset. This contribution discusses the effect of variation of parameters such as concentration of compounds, pH of solution and deposition time during CBD on device properties and composition and crystallinity of film. Efficiencies comparable to CIGS2/CdS devices have been achieved for CIGS2/ZnxCd1 - xS devices.

AB - Zinc cadmium sulfide (ZnxCd1 - xS) heterojunction partner layer prepared with chemical bath deposition (CBD) has exhibited better blue photon response and higher current densities due to its higher bandgap than that of conventional cadmium sulfide (CdS) layer for CuIn1 - xGaxS2 (CIGS2) solar cells. CIGS2/ZnxCd1 - xS devices have also shown higher open circuit voltage, Voc indicating improved junction properties. A conduction band offset has been observed by J-V curves at various temperatures indicating that still higher Voc can be obtained by optimizing the conduction band offset. This contribution discusses the effect of variation of parameters such as concentration of compounds, pH of solution and deposition time during CBD on device properties and composition and crystallinity of film. Efficiencies comparable to CIGS2/CdS devices have been achieved for CIGS2/ZnxCd1 - xS devices.

KW - Alternate heterojunction

KW - CIGS2

KW - ZnCdS

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