ZnxCd1 - xS as a heterojunction partner for CuIn1 - xGaxS2 thin film solar cells

Bhaskar Kumar, Parag Vasekar, Shirish A. Pethe, Neelkanth G. Dhere, Galymzhan T. Koishiyev

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Zinc cadmium sulfide (ZnxCd1 - xS) heterojunction partner layer prepared with chemical bath deposition (CBD) has exhibited better blue photon response and higher current densities due to its higher bandgap than that of conventional cadmium sulfide (CdS) layer for CuIn1 - xGaxS2 (CIGS2) solar cells. CIGS2/ZnxCd1 - xS devices have also shown higher open circuit voltage, Voc indicating improved junction properties. A conduction band offset has been observed by J-V curves at various temperatures indicating that still higher Voc can be obtained by optimizing the conduction band offset. This contribution discusses the effect of variation of parameters such as concentration of compounds, pH of solution and deposition time during CBD on device properties and composition and crystallinity of film. Efficiencies comparable to CIGS2/CdS devices have been achieved for CIGS2/ZnxCd1 - xS devices.

Original languageEnglish
Pages (from-to)2295-2299
Number of pages5
JournalThin Solid Films
Volume517
Issue number7
DOIs
Publication statusPublished - Feb 2 2009
Externally publishedYes

Fingerprint

Cadmium sulfide
Heterojunctions
cadmium sulfides
heterojunctions
solar cells
Conduction bands
thin films
baths
conduction bands
Open circuit voltage
zinc sulfides
Zinc
Solar cells
Energy gap
Current density
Photons
open circuit voltage
high current
high voltages
crystallinity

Keywords

  • Alternate heterojunction
  • CIGS2
  • ZnCdS

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Kumar, B., Vasekar, P., Pethe, S. A., Dhere, N. G., & Koishiyev, G. T. (2009). ZnxCd1 - xS as a heterojunction partner for CuIn1 - xGaxS2 thin film solar cells. Thin Solid Films, 517(7), 2295-2299. https://doi.org/10.1016/j.tsf.2008.10.108

ZnxCd1 - xS as a heterojunction partner for CuIn1 - xGaxS2 thin film solar cells. / Kumar, Bhaskar; Vasekar, Parag; Pethe, Shirish A.; Dhere, Neelkanth G.; Koishiyev, Galymzhan T.

In: Thin Solid Films, Vol. 517, No. 7, 02.02.2009, p. 2295-2299.

Research output: Contribution to journalArticle

Kumar, B, Vasekar, P, Pethe, SA, Dhere, NG & Koishiyev, GT 2009, 'ZnxCd1 - xS as a heterojunction partner for CuIn1 - xGaxS2 thin film solar cells', Thin Solid Films, vol. 517, no. 7, pp. 2295-2299. https://doi.org/10.1016/j.tsf.2008.10.108
Kumar, Bhaskar ; Vasekar, Parag ; Pethe, Shirish A. ; Dhere, Neelkanth G. ; Koishiyev, Galymzhan T. / ZnxCd1 - xS as a heterojunction partner for CuIn1 - xGaxS2 thin film solar cells. In: Thin Solid Films. 2009 ; Vol. 517, No. 7. pp. 2295-2299.
@article{82093eaad74041e695864a38caec1db3,
title = "ZnxCd1 - xS as a heterojunction partner for CuIn1 - xGaxS2 thin film solar cells",
abstract = "Zinc cadmium sulfide (ZnxCd1 - xS) heterojunction partner layer prepared with chemical bath deposition (CBD) has exhibited better blue photon response and higher current densities due to its higher bandgap than that of conventional cadmium sulfide (CdS) layer for CuIn1 - xGaxS2 (CIGS2) solar cells. CIGS2/ZnxCd1 - xS devices have also shown higher open circuit voltage, Voc indicating improved junction properties. A conduction band offset has been observed by J-V curves at various temperatures indicating that still higher Voc can be obtained by optimizing the conduction band offset. This contribution discusses the effect of variation of parameters such as concentration of compounds, pH of solution and deposition time during CBD on device properties and composition and crystallinity of film. Efficiencies comparable to CIGS2/CdS devices have been achieved for CIGS2/ZnxCd1 - xS devices.",
keywords = "Alternate heterojunction, CIGS2, ZnCdS",
author = "Bhaskar Kumar and Parag Vasekar and Pethe, {Shirish A.} and Dhere, {Neelkanth G.} and Koishiyev, {Galymzhan T.}",
year = "2009",
month = "2",
day = "2",
doi = "10.1016/j.tsf.2008.10.108",
language = "English",
volume = "517",
pages = "2295--2299",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "7",

}

TY - JOUR

T1 - ZnxCd1 - xS as a heterojunction partner for CuIn1 - xGaxS2 thin film solar cells

AU - Kumar, Bhaskar

AU - Vasekar, Parag

AU - Pethe, Shirish A.

AU - Dhere, Neelkanth G.

AU - Koishiyev, Galymzhan T.

PY - 2009/2/2

Y1 - 2009/2/2

N2 - Zinc cadmium sulfide (ZnxCd1 - xS) heterojunction partner layer prepared with chemical bath deposition (CBD) has exhibited better blue photon response and higher current densities due to its higher bandgap than that of conventional cadmium sulfide (CdS) layer for CuIn1 - xGaxS2 (CIGS2) solar cells. CIGS2/ZnxCd1 - xS devices have also shown higher open circuit voltage, Voc indicating improved junction properties. A conduction band offset has been observed by J-V curves at various temperatures indicating that still higher Voc can be obtained by optimizing the conduction band offset. This contribution discusses the effect of variation of parameters such as concentration of compounds, pH of solution and deposition time during CBD on device properties and composition and crystallinity of film. Efficiencies comparable to CIGS2/CdS devices have been achieved for CIGS2/ZnxCd1 - xS devices.

AB - Zinc cadmium sulfide (ZnxCd1 - xS) heterojunction partner layer prepared with chemical bath deposition (CBD) has exhibited better blue photon response and higher current densities due to its higher bandgap than that of conventional cadmium sulfide (CdS) layer for CuIn1 - xGaxS2 (CIGS2) solar cells. CIGS2/ZnxCd1 - xS devices have also shown higher open circuit voltage, Voc indicating improved junction properties. A conduction band offset has been observed by J-V curves at various temperatures indicating that still higher Voc can be obtained by optimizing the conduction band offset. This contribution discusses the effect of variation of parameters such as concentration of compounds, pH of solution and deposition time during CBD on device properties and composition and crystallinity of film. Efficiencies comparable to CIGS2/CdS devices have been achieved for CIGS2/ZnxCd1 - xS devices.

KW - Alternate heterojunction

KW - CIGS2

KW - ZnCdS

UR - http://www.scopus.com/inward/record.url?scp=58949090470&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58949090470&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2008.10.108

DO - 10.1016/j.tsf.2008.10.108

M3 - Article

VL - 517

SP - 2295

EP - 2299

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 7

ER -