RESIST EXPOSURE WITH LIGHT IONS.

I. Adesida; C. Anderson; E. D. Wolf

doi:10.1116/1.582757

RESIST EXPOSURE WITH LIGHT IONS.

I. Adesida
, C. Anderson
, E. D. Wolf

Management

Результат исследований › рецензирование

22 Цитирования (Scopus)

Аннотация

Radiation yields or G//s-values in polymethylmethacrylate (PMMA), which are the number of chain scissions per 100 ev of absorbed energy, due to irradiation with electrons, protons, and helium, lithium, beryllium, and boron ions have been measured. G//s values for protons and electrons are the same at approximately equals 0. 75, while those of helium, lithium, beryllium, and boron ions are 0. 45, 0. 44, 0. 40, and 0. 45, respectively. Initial results on sensitivities and mean pathlengths of ions in PMMA obtained from solubility studies are also presented.

Язык оригинала	English
Страницы (с-по)	1182-1185
Число страниц	4
Журнал	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Том	1
Номер выпуска	4
DOI	https://doi.org/10.1116/1.582757
Состояние	Published - 1983
Событие	Proc of the Int Symp on Electron, Ion and Photon Beams - Los Angeles, CA, USA Продолжительность: мая 31 1983 → июн. 3 1983

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "RESIST EXPOSURE WITH LIGHT IONS.",

abstract = "Radiation yields or G//s-values in polymethylmethacrylate (PMMA), which are the number of chain scissions per 100 ev of absorbed energy, due to irradiation with electrons, protons, and helium, lithium, beryllium, and boron ions have been measured. G//s values for protons and electrons are the same at approximately equals 0. 75, while those of helium, lithium, beryllium, and boron ions are 0. 45, 0. 44, 0. 40, and 0. 45, respectively. Initial results on sensitivities and mean pathlengths of ions in PMMA obtained from solubility studies are also presented.",

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TY - JOUR

T1 - RESIST EXPOSURE WITH LIGHT IONS.

AU - Adesida, I.

AU - Anderson, C.

AU - Wolf, E. D.

PY - 1983

Y1 - 1983

N2 - Radiation yields or G//s-values in polymethylmethacrylate (PMMA), which are the number of chain scissions per 100 ev of absorbed energy, due to irradiation with electrons, protons, and helium, lithium, beryllium, and boron ions have been measured. G//s values for protons and electrons are the same at approximately equals 0. 75, while those of helium, lithium, beryllium, and boron ions are 0. 45, 0. 44, 0. 40, and 0. 45, respectively. Initial results on sensitivities and mean pathlengths of ions in PMMA obtained from solubility studies are also presented.

AB - Radiation yields or G//s-values in polymethylmethacrylate (PMMA), which are the number of chain scissions per 100 ev of absorbed energy, due to irradiation with electrons, protons, and helium, lithium, beryllium, and boron ions have been measured. G//s values for protons and electrons are the same at approximately equals 0. 75, while those of helium, lithium, beryllium, and boron ions are 0. 45, 0. 44, 0. 40, and 0. 45, respectively. Initial results on sensitivities and mean pathlengths of ions in PMMA obtained from solubility studies are also presented.

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U2 - 10.1116/1.582757

DO - 10.1116/1.582757

M3 - Conference article

AN - SCOPUS:0009672236

SN - 0734-211X

VL - 1

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EP - 1185

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

T2 - Proc of the Int Symp on Electron, Ion and Photon Beams

Y2 - 31 May 1983 through 3 June 1983

ER -

RESIST EXPOSURE WITH LIGHT IONS.

Аннотация

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